A team led by Prof. KeonJaeLee and Sang-HeeKoPark, Department of Materials Science and Engineering, KAIST, developed an ultrathin transparent oxide thin film transistor (TFT) for flexible display active matrix backplane using inorganic laser lift-off ). With the advent of the Internet of Things (IoT) era, the strong demand for wearable transparent displays has been growing and can be applied in various fields such as AR and skin-like flexible thin devices. However, the previous flexible transparent displays had some real challenges to overcome, two of which were poor transparency and poor electrical performance. In order to improve transparency and performance, past research attempts to use inorganic-based electronic products, but the basic thermal instability of the plastic substrate limits the high-temperature process, which is the process of manufacturing high-performance electronic devices An important step necessary. This image shows an ultrathin, flexible, and transparent oxide TFT produced using an inorganic laser lift-off process. To solve this problem, a team led by Prof. KeonJaeLee and Sang-HeeKoPark, Department of Materials Science and Engineering, KAIST, developed an ultrathin transparent oxide for use in flexible display active matrix backplanes using inorganic laser lift-off Thin Film Transistor (TFT). Professor Lee's team previously demonstrated inorganic laser lift-off (ILLO) technology on energy harvesting devices ("Advanced Materials", February 12, 2014) and flexible memory devices ("Advanced Materials", September 8, 2014). The team made a high-performance oxide TFT array on a laser-enabled sacrificial substrate. After being irradiated with the laser from the back of the substrate, only the oxide TFT array is separated from the sacrificial substrate due to the interaction between the laser and the laser active layer and then transferred onto an ultrathin (4 μm thick) plastic. Finally, the ultra-thin oxide driver circuit for flexible displays after this transfer is attached to the surface of the human skin to demonstrate the possibilities for wearable applications. This adherent oxide TFT still showed a high optical transparency of 83% and an electron mobility of 40 cm ^ 2 / (V * s), even after severe cycles of several cycles. Professor Lee said, "By using our inorganic laser lift-off process, which removes expensive polyimide substrates, technical barriers to high-performance transparent flexible displays have been overcome at a lower cost." In addition, this high quality oxide Semiconductors can easily be transferred to skin-like or any flexible substrate for wearable applications. "
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Laser technology has developed thin film transistors for wearable displays